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1

The big data impact and application study on the like ecosystem construction of open internet of things

Journal:

Cluster Computing

Year:

2018

Language:

english

File:

PDF, 1.12 MB

english, 2018

2

[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen, China (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Large-area Visible-blind 4H-SiC Ultraviolet Avalanche Photodiode with High Gain and Low Bias Voltage

Zhou, Xingye, Li, Jia, Lu, Weili, Song, Xubo, Yin, Shunzheng, Wang, Yuangang, Tan, Xin, Lv, Yuanjie, Feng, Zhihong

Year:

2018

Language:

english

File:

PDF, 423 KB

english, 2018

3

Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

Zhou, Xingye, Feng, Zhihong, Wang, Li, Wang, Yuangang, Lv, Yuanjie, Dun, Shaobo, Cai, Shujun

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 687 KB

english, 2014

4

Simulation study of GaN-based HFETs with graded AlGaN barrier

Zhou, Xingye, Feng, Zhihong, Fang, Yulong, Wang, Yuangang, Lv, Yuanjie, Dun, Shaobo, Gu, Guodong, Tan, Xin, Song, Xubo, Yin, Jiayun, Cai, Shujun

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 959 KB

english, 2015

5

Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

Wang, Zeheng, Zhang, Bo, Zhou, Qi, Fang, Yulong, Zhou, Xingye, Shi, Yuanyuan, Lv, Yuanjie, Feng, Zhihong, Liu, Li, Wang, Yuan Gang, Zhang, Anbang

Journal:

Electronics Letters

Year:

2015

Language:

english

File:

PDF, 249 KB

english, 2015

6

Dynamic Characteristics of AlGaN/GaN Fin-MISHEMTs With Al₂O₃ Dielectric

Zhou, Xingye, Tan, Xin, Lv, Yuanjie, Wang, Yuangang, Song, Xubo, Gu, Guodong, Xu, Peng, Guo, Hongyu, Feng, Zhihong, Cai, Shujun

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.38 MB

english, 2018

7

[IEEE 2017 IEEE 12th International Conference on ASIC (ASICON) - Guiyang (2017.10.25-2017.10.28)] 2017 IEEE 12th International Conference on ASIC (ASICON) - Dynamic characteristics and related trapping effects of GaN-based Fin-MISHEMTs

Zhou, Xingye, Tan, Xin, Lv, Yuanjie, Wang, Yuangang, Song, Xubo, Gu, Guodong, Xu, Peng, Guo, Hongyu, Feng, Zhihong, Cai, Shujun

Year:

2017

Language:

english

File:

PDF, 336 KB

english, 2017

8

Threshold voltage modulation mechanism of high-performance normally-off AlGaN/GaN gates-separating groove HFET

Wang, Yuangang, Lv, Yuanjie, Zhou, Xingye, Song, Xubo, Zhang, Zhirong, Yin, Jiayun, Gu, Guodong, Tan, Xin, Guo, Hongyu, Fang, Yulong, Feng, Zhihong, Cai, Shujun

Journal:

Superlattices and Microstructures

Year:

2018

Language:

english

File:

PDF, 867 KB

english, 2018

9

Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow Technique

Zhou, Xingye, Han, Tingting, Lv, Yuanjie, Li, Jia, Lu, Weili, Wang, Yuangang, Song, Xubo, Tan, Xin, Liang, Shixiong, Feng, Zhihong, Cai, Shujun

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 688 KB

english, 2018

10

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - High-Uniformity 4×4 SiC Avalanche Photodiode Array for Ultraviolet Detection

Zhou, Xingye, Lv, Yuanjie, Wang, Yuangang, Han, Tingting, Liang, Shixiong, Feng, Zhihong

Year:

2019

Language:

english

File:

PDF, 576 KB

english, 2019

11

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Thin-Barrier InAlN/GaN MISHEMTs Using LPCVD Si 3 N 4 as Gate Dielectric

Zhou, Xingye, Wang, Yuangang, Tan, Xin, Gu, Guodong, Lv, Yuanjie, Feng, Zhihong

Year:

2019

Language:

english

File:

PDF, 164 KB

english, 2019

12

8W8 4H-SiC Ultraviolet Avalanche Photodiode Arrays with High Uniformity

Zhou, Xingye, Tan, Xin, Lv, Yuanjie, Wang, Yuangang, Li, Jia, Han, Tingting, Guo, Hongyu, Liang, Shixiong, Zhang, Zi-Hui, Feng, Zhihong, Cai, Shujun

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 822 KB

english, 2019

13

Single-Photon-Counting Performance of 4H-SiC Avalanche Photodiodes With a Wide-Range Incident Flux

Zhou, Xingye, Tan, Xin, Lv, Yuanjie, Wang, Yuangang, Li, Jia, Song, Xubo, Liang, Shixiong, Feng, Zhihong, Cai, Shujun

Journal:

IEEE Photonics Technology Letters

Year:

2020

File:

PDF, 1.00 MB

2020

14

AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

Fang, Yulong, Feng, Zhihong, Yin, Jiayun, Zhou, Xingye, Wang, Yuangang, Gu, Guodong, Song, Xubo, Lv, Yuanjie, Li, Chengming, Cai, Shujun

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.15 MB

english, 2014

15

[IEEE 2015 IEEE 11th International Conference on ASIC (ASICON ) - Chengdu, China (2015.11.3-2015.11.6)] 2015 IEEE 11th International Conference on ASIC (ASICON) - Dependency of current collapse on the device structure of GaN-based HEMTs

Zhou, Xingye, Feng, Zhihong, Lv, Yuanjie, Tan, Xin, Wang, Yuangang, Gu, Guodong, Song, Xubo, Xu, Peng, Dun, Shaobo, Cai, Shujun

Year:

2015

Language:

english

File:

PDF, 346 KB

english, 2015

16

Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

Wang, Yuangang, Lv, Yuanjie, Song, Xubo, Chi, Lei, Yin, Jiayun, Zhou, Xingye, Fang, Yulong, Tan, Xin, Guo, Hongyu, Peng, Hao, Gu, Guodong, Feng, Zhihong, Cai, Shujun

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.17 MB

english, 2017

17

High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

Wang, Yuangang, Lv, Yuanjie, Zhou, Xingye, Yin, Jiayun, Han, Tingting, Gu, Guodong, Song, Xubo, Tan, Xin, Dun, Shaobo, Guo, Hongyu, Fang, Yulong, Feng, Zhihong, Cai, Shujun

Journal:

IEEE Journal of the Electron Devices Society

Year:

2018

Language:

english

File:

PDF, 1.14 MB

english, 2018

18

Influence of Gate Recess on the Electronic Characteristics of β -Ga 2 O 3 MOSFETs

Lv, Yuanjie, Mo, Jianghui, Song, Xubo, He, Zezhao, Wang, Yuangang, Tan, Xin, Zhou, Xingye, Gu, Guodong, Guo, Hongyu, Feng, Zhihong

Journal:

Superlattices and Microstructures

Year:

2018

Language:

english

File:

PDF, 1.13 MB

english, 2018

19

An integrated lncRNA, microRNA and mRNA signature to improve prognosis prediction of colorectal cancer

Xiong, Yongfu, Wang, Rong, Peng, Linglong, You, Wenxian, Wei, Jinlai, Zhang, Shouru, Wu, Xingye, Guo, Jinbao, Xu, Jun, Lv, Zhenbing, Fu, Zhongxue

Journal:

Year:

2017

Language:

english

File:

PDF, 6.67 MB

english, 2017

20

Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

Lv, Yuanjie, Zhou, Xingye, Long, Shibing, Song, Xubo, Wang, Yuangang, Liang, Shixiong, He, Zezhao, Han, Tingting, Tan, Xin, Feng, Zhihong, Dong, Hang, Zhou, Xuanze, Yu, Yangtong, Cai, Shujun, Liu, Min

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 1.37 MB

english, 2018

21

Synthesis, Crystal Structure, and Photocatalytic Properties of a Zinc(II) Coordination Polymer Based on 3-Hydroxy-2-pyridinecarboxylic Acid

Gu, Xingye, Lv, Wei, Hui, Yangyang, Liu, Xiao, Wu, Minghui, Yang, Yan, She, Shixiong

Journal:

Zeitschrift für anorganische und allgemeine Chemie

Year:

2019

Language:

english

File:

PDF, 1.27 MB

english, 2019

22

High-Voltage (201) β-Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination

Wang, Yuangang, Cai, Shujun, Liu, Ming, Lv, Yuanjie, Long, Shibing, Zhou, Xingye, Song, Xubo, Liang, Shixiong, Han, Tingting, Tan, Xin, Feng, Zhihong

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 803 KB

2019

23

Enhancement‐Mode β ‐Ga 2 O 3 MOSFET with High Breakdown Voltage Over 3000 V Realized by Oxygen Annealing

Lv, Yuanjie, Zhou, Xingye, Long, Shibing, Wang, Yuangang, Song, Xubo, Zhou, Xuanze, Xu, Guangwei, Liang, Shixiong, Feng, Zhihong, Cai, Shujun, Fu, Xingchang, Pu, Aimin, Liu, Ming

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2019

File:

PDF, 706 KB

2019

24

Impact of Resistance on the Performance of Ultraviolet 4H-SiC Avalanche Photodiodes

Zhou, Xingye, Tan, Xin, Lv, Yuanjie, Wang, Yuangang, Feng, Zhihong, Cai, Shujun

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 1.58 MB

2020

25

Oxygen annealing impact on Î² -Ga 2 O 3 MOSFETs: Improved pinch-off characteristic and output power density

Lv, Yuanjie, Liu, Hongyu, Wang, Yuangang, Fu, Xingchang, Ma, Chunlei, Song, Xubo, Zhou, Xingye, Zhang, Yanni, Dong, Pengfei, Du, Hanghai, Liang, Shixiong, Han, Tingting, Zhang, Jincheng, Feng, Zhihong

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 1.64 MB

2020

26

Demonstration of ${\rm{\beta}-Ga_{2}O_{3}}$ Junction Barrier Schottky Diodes with a Baliga's Figure of Merit of 0.85 ${GW/cm^{2}}$ or a 5A/700 V Handling Capabilities

Lv, Yuanjie, Wang, Yuangang, Fu, Xingchang, Dun, Shaobo, Sun, Zhaofeng, Liu, Hongyu, Zhou, Xingye, Song, Xubo, Dang, Kui, Liang, Shixiong, Zhang, Jincheng, Zhou, Hong, Feng, Zhihong, Cai, Shujun, Hao,

Journal:

IEEE Transactions on Power Electronics

Year:

2020

File:

PDF, 1.57 MB

2020